RF GaN Market

The past decade has witnessed significant growth in the RF GaN market which has reshaped the RF power devices landscape. Demand for RF amplifiers with high rate of data transmission, higher frequency and power has led to the development in GaN RF device technology. The various factors attributing to the growth of global RF GaN market are increasing adoption of RF GaN power devices for energy & power applications and rise in demand for IT & telecommunication equipment that use RF GaN power devices. Furthermore, innovation in linearization and power efficiency of RF power amplifiers will create opportunities for market players during the forecast period. This study on global RF GaN market provides detailed information about the industry trends and dynamics, market size, competitive landscape, and growth opportunities. This research report categorizes the RF GaN market based on material type, application, and region/country.

Based on material type, the market has been segmented into GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond. The GaN-on-SiC segment holds the largest market share; it is expected to register the highest CAGR during the forecast period owing to benefits such as high performance, thermal conductivity, reliability, and cut-off frequency that promote its adoption across various industry verticals.

The applications of RF GaN covered in the study are IT & telecommunication, aerospace, military & defense, and others. The military & defense segment is the most significant contributor to the RF GaN market; however, the IT & telecommunication segment is expected to register the highest CAGR from 2018 to 2023 owing to the advent of 5G technology which demands high use of RF GaN power devices.

The regions included in the study are North America, Europe, Asia-Pacific, Rest of the World (South America, and Middle-East and Africa (MEA)). North America is the dominating segment in terms of market share whereas Asia-Pacific is expected to exhibit the highest growth rate during the forecast period. The RF GaN market is a highly competitive market with the presence of many vendors that offer feature-rich and innovative products to their customers.

The major vendors profiled in the study are NXP Semiconductors N.V., STMicroelectronics N.V., Analog Devices Inc., Cree, Inc., Qorvo, Inc., Toshiba Corporation, ROHM Semiconductors, Aethercomm Inc., Microchip Technology Inc., and Raytheon Company. The market players are adopting several organic and inorganic growth strategies, such as product enhancement, product launch, partnerships, agreements, and collaboration to improve their position and excel in the global RF GaN market. In 2019, NXP Semiconductors N.V. and Movandi entered into a partnership to collaborate on millimeter wave (mmWave) solutions for 5G networks. The partnership combines NXP’s digital networking and signal processing portfolio with Movandi’s innovative RF transceiver and systems architecture to deliver high-performance 5G solutions. Similarly, ROHM started the construction of their production building at its Apollo plant in Chikugo, Japan. The expanded production capacity is to meet the growing demand for silicon carbide (SiC) power devices